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revisions a changes in accordance with nor 5962-r124-98 - thl. 98-06-12 raymond l. monnin b update boilerplate to mil-prf-38535 requirements. editorial changes throughout. ? jak 04-05-07 thomas m. hess rev sheet rev b b b b b sheet 15 16 17 18 19 rev status rev b b b b b b b b b b b b b b of sheets sheet 1 2 3 4 5 6 7 8 9 10 11 12 13 14 pmic n/a prepared by thanh v. nguyen standard microcircuit drawing checked by thanh v. nguyen defense supply center columbus columbus, ohio 43216 http://www.d scc.dla.mil approved by monica l. poelking this drawing is available for use by all departments and agencies of the department of defense drawing approval date 95-10-31 microcircuit, digital, radiation hardened, high speed cmos, hex inverter with open drain, monolithic silicon amsc n/a revision level b size a cage code 67268 5962-95801 sheet 1 of 19 dscc form 2233 apr 97 5962-e128-04 distribution statement a . approved for public release; distribution is unlimited. .com .com .com 4 .com u datasheet
standard microcircuit drawing size a 5962-95801 defense supply center columbus columbus, ohio 43216-5000 revision level b sheet 2 dscc form 2234 apr 97 1. scope 1.1 scope . this drawing documents two product assurance class le vels consisting of high reliability (device classes q and m) and space application (device class v). a choice of case outlines and lead finishes are available and are reflected in the part or identifying number (pin). when available, a choice of radiation hardness assurance (rha ) levels are reflected in the pin. 1.2 pin . the pin is as shown in the following example: 5962 r 95801 01 v x c federal rha device device case lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) \ / (see 1.2.3) \/ drawing number 1.2.1 rha designator . device classes q and v rha marked devices meet the mil-prf-38535 specified rha levels and are marked with the appropriate rha designator. device class m rha marked devices meet the mil-prf-38535, appendix a specified rha levels and are marked with the appropriate rha designator. a dash (-) indicates a non-rha device. 1.2.2 device type(s) . the device type(s) identify the circuit function as follows: device type generic number circuit function 01 hcs05 radiation hardened, sos, high speed cmos, hex inverter with open drain 1.2.3 device class designator . the device class designator is a single letter identifying the product assurance level as follows: device class device requirements documentation m vendor self-certification to the requirements for mil-std-883 compliant, non-jan class level b microcircuits in accordance with mil-prf-38535, appendix a q, v certification and qualification to mil-prf-38535 1.2.4 case outline(s) . the case outline(s) are as designated in mil-std-1835 and as follows: outline letter descriptive designator terminals package style c cdip2-t14 14 dual-in-line x cdfp3-f14 14 flat pack 1.2.5 lead finish . the lead finish is as specified in mil-pr f-38535 for device classes q and v or mil-prf-38535, appendix a for device class m. .com .com .com .com 4 .com u datasheet
standard microcircuit drawing size a 5962-95801 defense supply center columbus columbus, ohio 43216-5000 revision level b sheet 3 dscc form 2234 apr 97 1.3 absolute maximum ratings . 1 / 2 / 3 / supply voltage range (v cc ).................................................................................. -0.5 v dc to +7.0 v dc dc input voltage range (v in )................................................................................ -0.5 v dc to v cc + 0.5 v dc dc output voltage range (v out )........................................................................... -0.5 v dc to v cc + 0.5 v dc dc input current, any one input (i in ) .................................................................... 10 ma dc output current, any one output (i out ) ............................................................. 25 ma storage temperature range (t stg )....................................................................... -65 c to +150 c lead temperature (solderi ng, 10 seconds ).......................................................... +265 c thermal resistance, junction-to-case ( jc ): case outline c................................................................................................... 24 c/w case outline x ................................................................................................... 30 c/w thermal resistance, junction-to-ambient ( ja ): case outline c................................................................................................... 74 c/w case outline x ................................................................................................... 116 c/w junction temperature (t j ) .................................................................................... +175 c maximum package power dissipation at t a = +125 c (p d ): 4 / case outline c................................................................................................... 0.68 w case outline x ................................................................................................... 0.43 w 1.4 recommended operating conditions . 2 / 3 / supply voltage range (v cc ).................................................................................. +4.5 v dc to +5.5 v dc input voltage range (v in )...................................................................................... +0.0 v to v cc output voltage range (v out ) ................................................................................ +0.0 v to v cc maximum low level input voltage (v il ) ................................................................. 30% of v cc minimum high level input voltage (v ih ) ................................................................ 70% of v cc case operating temperature range (t c ) .............................................................. -55 c to +125 c maximum input rise and fall time at v cc = 4.5 v (t r , t f )......................................... 500 ns radiation features: total dose ......................................................................................................... 2 x 10 5 rads (si) single event phenomenon (sep) effective linear energy threshold (let) no upsets (see 4.4.4.4) .................................... > 100 mev/(cm 2 /mg) 5 / dose rate upset (20 ns pulse) ........................................................................... > 1 x 10 10 rads (si)/s 5 / latch-up ............................................................................................................ none 5 / dose rate surviv ability ....................................................................................... > 1 x 10 12 rads (si)/s 5 / 1 / stresses above the absolute maximum rating may cause permanent damage to the device. extended operation at the maximum levels may degrade performance and affect reliability. 2 / unless otherwise noted, all voltages are referenced to gnd. 3 / the limits for the parameters specified herein shall apply over the full specified v cc range and case temperature range of -55 c to +125 c unless otherwise noted. 4 / if device power exceeds package dissipation capability, prov ide heat sinking or derate li nearly (the derating is based on ja ) at the following rate: case outline c ....................................................................................................... 13. 5 mw/ c case outline x ....................................................................................................... 8.8 mw/ c 5 / guaranteed by design or process but not tested. .com .com .com .com 4 .com u datasheet
standard microcircuit drawing size a 5962-95801 defense supply center columbus columbus, ohio 43216-5000 revision level b sheet 4 dscc form 2234 apr 97 2. applicable documents 2.1 government specification, standards, and handbooks . the following specification, standards, and handbooks form a part of this drawing to the extent specified herein. unless ot herwise specified, the issues of these documents are those liste d in the issue of the department of defense i ndex of specifications and standards (dodi ss) and supplement thereto, cited in the solicitation. specification department of defense mil-prf-38535 - integrated circuits, manufacturing, general specification for. standards department of defense mil-std-883 - test method standard microcircuits. mil-std-1835 - interface standard electronic component case outlines. handbooks department of defense mil-hdbk-103 - list of standard microcircuit drawings. mil-hdbk-780 - standard microcircuit drawings. (unless otherwise indicated, copies of the specificat ion, standards, and handbooks are ava ilable from the standardization document order desk, 700 robbins avenue, building 4d, philadelphia, pa 19111-5094.) 2.2 order of precedence . in the event of a conflict between the text of th is drawing and the references cited herein, the text of this drawing takes precedence. nothing in this docum ent, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. requirements 3.1 item requirements . the individual item requirements for device classes q and v shall be in accordance with mil-prf-38535 and as specified herein or as modified in the device manufacturer' s quality management (qm) plan. the modification in the qm plan shall not affect the form, fit, or function as described herein. the individual item requirements for device class m shall be in accordance with mil-prf-38535, appendix a for non-jan class level b devices and as specified herein. 3.1.1 microcircuit die . for the requirements for microcircu it die, see appendix a to this document. 3.2 design, construction, and physical dimensions . the design, construction, and physica l dimensions shall be as specified in mil-prf-38535 and herein for device classes q and v or mil-prf-38535, appendix a and herein for device class m. 3.2.1 case outlines . the case outlines shall be in accordance with 1.2.4 herein. 3.2.2 terminal connections . the terminal connections sha ll be as specified on figure 1. 3.2.3 truth table . the truth table shall be as specified on figure 2 3.2.4 logic diagram . the logic diagram shall be as specified on figure 3. 3.2.5 switching waveforms and test circuit . the switching waveforms and test circuit shall be as specified on figure 4. 3.2.6 irradiation test connections . the irradiation test connections sha ll be as specified in table iii herein. 3.3 electrical perform ance characteristics and posti rradiation parameter limits . unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as s pecified in table i and shall apply over th e full case operating temperature range. .com .com .com .com 4 .com u datasheet
standard microcircuit drawing size a 5962-95801 defense supply center columbus columbus, ohio 43216-5000 revision level b sheet 5 dscc form 2234 apr 97 3.4 electrical test requirements . the electrical test requirements shall be the subgroups specified in tabl e iia. the electrical tests for each subgroup are defined in table i. 3.5 marking . the part shall be marked with the pin listed in 1.2 her ein. in addition, the manufacturer's pin may also be marked as listed in mil-hdbk-103. for pa ckages where marking of the entire smd pi n number is not feasible due to space limitations, the manufacturer has the option of not marking the "5962-" on the device. for rha product using this option, the rha designator shall still be marked. marking for device cl asses q and v shall be in accordance with mil-prf-38535. marking for device class m shall be in accordance with mil-prf-38535, appendix a. 3.5.1 certification/compliance mark . the certification mark for device classes q and v shall be a "qml" or "q" as required in mil-prf-38535. the compliance mark for device class m shall be a "c" as required in mil-prf-38535, appendix a. 3.6 certificate of compliance . for device classes q and v, a certificate of compliance shall be required from a qml-38535 listed manufacturer in order to supply to t he requirements of this drawing (see 6.6.1 herein). for device class m, a certifica te of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in mil-hdbk-103 (see 6.6.2 herein). the certificate of compliance submitted to ds cc-va prior to listing as an approv ed source of supply for this drawing shall affirm that the manufactu rer's product meets, for device classes q and v, the requirements of mil-prf-38535 and herein or for device class m, the requi rements of mil-prf-38535, appendix a and herein. 3.7 certificate of conformance . a certificate of conformance as required for device classes q and v in mil-prf-38535 or for device class m in mil-prf-38535, appendix a shall be provided with each lot of microcircuits delivered to this drawing. 3.8 notification of change for device class m . for device class m, notification to dscc-va of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change as defined in mil-prf-38535, appendix a. 3.9 verification and review for device class m . for device class m, dscc, dscc's agent, and the acquiring activity retain the option to review the manufacturer's facility and applicable required documentation. offs hore documentation shall be made available onshore at the option of the reviewer. 3.10 microcircuit group assignment for device class m . device class m devices covered by this drawing shall be in microcircuit group number 36 (see mil-prf-38535, appendix a). .com .com .com .com 4 .com u datasheet
standard microcircuit drawing size a 5962-95801 defense supply center columbus columbus, ohio 43216-5000 revision level b sheet 6 dscc form 2234 apr 97 table i. electrical per formance characteristics . limits 2 / unit test symbol test conditions 1 / -55 c t c +125 c unless otherwise specified device type v cc group a subgroups min max for all inputs affecting output under test, v in = 3.15 v or 1.35 v for all other inputs, v in = v cc or gnd all 1, 2, 3 0.1 i ol = 50 a m, d, p, l, r 3 / all 4.5 v 1 0.1 v for all inputs affecting output under test, v in = 3.85 v or 1.65 v for all other inputs, v in = v cc or gnd all 1, 2, 3 0.1 supply current v ol i ol = 50 a m, d, p, l, r 3 / all 5.5 v 1 0.1 v 1 +0.5 for input under test, v in = 5.5 v for all other inputs, v in = v cc or gnd all 2, 3 +5.0 input current high i ih m, d, p, l, r 3 / all 5.5 v 1 +5.0 a 1 -0.5 for input under test, v in = gnd for all other inputs, v in = v cc or gnd all 2, 3 -5.0 input current low i il m, d, p, l, r 3 / all 5.5 v 1 -5.0 a 1 4.8 for all inputs affecting output under test, v in = 4.5 v or 0.0 v for all other inputs, v in = v cc or gnd all 2, 3 4.0 output current low (sink) i ol 4 / v out = 0.4 v m, d, p, l, r 3 / all 4.5 v 1 4.0 ma 1 +1.0 for all inputs, v in = v cc or gnd v out = 5.5 v all 2, 3 +50.0 three-state output leakage current i ozh m, d, p, l, r 3 / all 5.5 v 1 +50.0 a 1 10.0 v in = v cc or gnd all 2, 3 200.0 quiescent supply current i cc m, d, p, l, r 3 / all 5.5 v 1 200.0 a input capacitance c in 4 10 4 15 power dissipation capacitance c pd 5 / v ih = 5.0 v, v il = 0.0 v f = 1 mhz see 4.4.1c all 5.0 v 5, 6 23 pf v ih = 3.15 v, v il = 1.35 v see 4.4.1b all 7, 8 l h functional test 6 / m, d, p, l, r 3 / all 4.5 v 7 l h 9 2.0 18.0 c l = 50 pf r l = 500 ? all 10, 11 2.0 20.0 t plz 7 / see figure 4 m, d, p, l, r 3 / all 4.5 v 9 2.0 20.0 ns 9 2.0 18.0 c l = 50 pf r l = 500 ? all 10, 11 2.0 20.0 propagation delay time, an to yn t pzl 7 / see figure 4 m, d, p, l, r 3 / all 4.5 v 2.0 20.0 ns 9 15.0 ouput transition time t thl 8 / c l = 50 pf r l = 500 ? see figure 4 all 4.5 v 10, 11 22.0 ns see footnotes on next sheet. .com .com .com .com 4 .com u datasheet
standard microcircuit drawing size a 5962-95801 defense supply center columbus columbus, ohio 43216-5000 revision level b sheet 7 dscc form 2234 apr 97 table i. electrical per formance characteristics ? continued. 1 / each input/output, as applicable, shall be tested at the specif ied temperature, for the specified limits, to the tests in ta ble i herein. output terminals not designated shall be high leve l logic, low level logic, or open, except for the i cc test, the output terminals shall be open. when performing the i cc test, the current meter shall be placed in the circuit such that all current flows through the meter. 2 / for negative and positive voltage and current values, the sign designates the potential difference in reference to gnd and the direction of current flow, respectively; and the absolute val ue of the magnitude, not the sign, is relative to the minimum and maximum limits, as applicable, listed herein. 3 / devices supplied to this drawing meet all levels m, d, p, l, and r of irradiation. however, these devices are only tested a t the "r" level. pre and post irradiation values are identical unless otherwise specified in table i. when performing post irradiation electrical measur ements for any rha level, t a = +25 c. 4 / force/measure functions may be interchanged. 5 / power dissipation capacitance (c pd ) determines both the power consumption (p d ) and current consumption (i s ). where p d = (c pd + c l ) (v cc x v cc )f + (i cc x v cc ) i s = (c pd + c l ) v cc f + i cc f is the frequency of the input signal. 6 / the test vectors used to verify the truth table shall, at a minimum, test all functions of each input and output. all possi ble input to output logic patterns per function shall be guaranteed, if not tested, to the truth table in figure 2 herein. for v out measurements, l 0.5 v and h 4.0 v. 7 / ac limits at v cc = 5.5 v are equal to the limits at v cc = 4.5 v. for propagation delay tests, all paths must be tested. 8 / this parameter is guaranteed but not test ed. this parameter is characterized upon initial design or process changes which affect this characteristic. device types all case outlines c and x terminal number terminal symbol 1 2 3 4 5 6 7 8 9 10 11 12 13 14 a1 y1 a2 y2 a3 y3 gnd y4 a4 y5 a5 y6 a6 v cc figure 1. terminal connections . .com .com .com .com 4 .com u datasheet
standard microcircuit drawing size a 5962-95801 defense supply center columbus columbus, ohio 43216-5000 revision level b sheet 8 dscc form 2234 apr 97 inputs ouputs an yn l z 1 / h 2 / h l 1 / no pullup resistor. 2 / with pullup resistor. h = high voltage level l = low voltage level z = high impedance figure 2. truth table . figure 3. logic diagram . .com .com .com .com 4 .com u datasheet
standard microcircuit drawing size a 5962-95801 defense supply center columbus columbus, ohio 43216-5000 revision level b sheet 9 dscc form 2234 apr 97 notes: 1. c l = 50 pf minimum or equivalent (includes test jig and probe capacitance). 2. r l = 500 ? or equivalent. 3. input signal from pulse generator: v in = 0.0 v to v cc ; prr 10 mhz; t r 3.0 ns; t f 3.0 ns; t r and t f shall be measured from 10% v cc to 90% v cc and from 90% v cc to 10% v cc , respectively. figure 4. switching waveforms and test circuit. .com .com .com .com 4 .com u datasheet
standard microcircuit drawing size a 5962-95801 defense supply center columbus columbus, ohio 43216-5000 revision level b sheet 10 dscc form 2234 apr 97 4. quality assurance provisions 4.1 sampling and inspection . for device classes q and v, sampling and inspection procedures shall be in accordance with mil-prf-38535 or as modified in the device manufacturer's qua lity management (qm) plan. the modification in the qm plan shall not affect the form, fit, or function as described herein. for device class m, sampling and inspection procedures shall be in accordance with mil-prf-38535, appendix a. 4.2 screening . for device classes q and v, screening shall be in accordance with mil-prf-38535, and shall be conducted on all devices prior to qualification and technology conform ance inspection. for device class m, screening shall be in accordance with method 5004 of mil-std-883, and shall be conduct ed on all devices prior to qua lity conformance inspection. 4.2.1 additional criteria for device class m . a. burn-in test, method 1015 of mil-std-883. (1) test condition a, b, c, or d. the test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. the test circuit shall specify the inputs, outputs, biases, and pow er dissipation, as applicable, in acco rdance with the intent specified in test method 1015 of mil-std-883. (2) t a = +125 c, minimum. b. interim and final electrical test parameter s shall be as specified in table iia herein. 4.2.2 additional criteria for device classes q and v . a. the burn-in test duration, test condi tion and test temperature, or approved alte rnatives shall be as specified in the device manufacturer's qm plan in accordance with mil-prf- 38535. the burn-in test circuit shall be maintained under document revision level control of the device manufacturer' s technology review board (trb) in accordance with mil-prf-38535 and shall be made available to the acquiring or preparing activity upon request. the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1015 of mil-std-883. b. interim and final electrical test parameter s shall be as specified in table iia herein. c. additional screening for device class v beyond the require ments of device class q shall be as specified in mil-prf-38535, appendix b or as modified in the dev ice manufacturer?s quality management (qm) plan. 4.3 qualification inspection for device classes q and v . qualification inspection for device classes q and v shall be in accordance with mil-prf-38535. inspections to be perform ed shall be those specified in mil-prf-38535 and herein for groups a, b, c, d, and e inspec tions (see 4.4.1 through 4.4.4). 4.4 conformance inspection . technology conformance inspection for cl asses q and v shall be in accordance with mil-prf-38535, or as specified in the qm plan, including groups a, b, c, d, and e inspections and as specified herein. quality conformance inspection for device class m shall be in acco rdance with mil-prf-38535, appendix a and as specified herein. inspections to be performed for device class m shall be thos e specified in method 5005 of mil-std-883 and herein for groups a, b, c, d, and e inspections (see 4.4.1 through 4.4.4). 4.4.1 group a inspection . a. tests shall be as specified in table iia herein. b. for device class m, subgroups 7 and 8 tests shall be sufficient to verify the truth table. for device classes q and v, subgroups 7 and 8 shall include verifying the functionality of the device. c. c in and c pd shall be measured only for initial qualification and after process or design changes which may affect capacitance. c in shall be measured between the designated termi nal and gnd at a frequency of 1 mhz. for c in and c pd , tests shall be sufficient to validate the limits defined in table i herein. 4.4.2 group c inspection . the group c inspection end-point electrical paramet ers shall be as specified in table iia herein. .com .com .com .com 4 .com u datasheet
standard microcircuit drawing size a 5962-95801 defense supply center columbus columbus, ohio 43216-5000 revision level b sheet 11 dscc form 2234 apr 97 table iia. electrical test requirements . test requirements subgroups (in accordance with mil-std-883, method 5005, table i) subgroups (in accordance with mil-prf-38535, table iii) device class m device class q device class v interim electrical parameters (see 4.2) 1, 7, 9 1, 7, 9 1, 7, 9 final electrical parameters (see 4.2) 1, 2, 3, 7, 8, 9, 10, 11 1 / 1, 2, 3, 7, 8, 9, 10, 11 1 / 1, 2, 3, 7, 8, 9, 10, 11 2 / 3 / group a test requirements (see 4.4) 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11 group c end-point electrical parameters (see 4.4) 1, 2, 3, 7, 8, 9, 10, 11 1, 2, 3, 7, 8, 9, 10, 11 1, 2, 3, 7, 8, 9, 10, 11 3 / group d end-point electrical parameters (see 4.4) 1, 7, 9 1, 7, 9 1, 7, 9 group e end-point electrical parameters (see 4.4) 1, 7, 9 1, 7, 9 1, 7, 9 1 / pda applies to subgroups 1 and 7. 2 / pda applies to subgroups 1, 7, 9, and deltas. 3 / delta limits, as specified in table iib, shall be required where specified, and the delta limits shall be completed with reference to the zero hour electrical parameters (see table i). table iib. burn-in and operating life test, delta parameters (+25 c) . parameters 1 / delta limits i cc +3.0 a i ol -15% i ozh 200 na 1 / these parameters shall be recorded before and after the required burn-in and lif e test to determine delta limits. 4.4.2.1 additional criteria for device class m . steady-state life test conditions, method 1005 of mil-std-883: a. test condition a, b, c, or d. the test circuit s hall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acqui ring activity upon request. the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 of mil-std-883. b. t a = +125 c, minimum. c. test duration: 1,000 hours, except as permitted by method 1005 of mil-std-883. 4.4.2.2 additional criteria for device classes q and v . the steady-state life test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturer's qm plan in accordance with mil-prf-38535. the test circuit shall be maintained under document revision level c ontrol by the device manufacturer's trb in accordance with mil-prf-38535 and shall be made available to the acquiring or prepar ing activity upon request. the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 of mil-std-883. 4.4.3 group d inspection . the group d inspection end-point electrical paramet ers shall be as specified in table iia herein. .com .com .com .com 4 .com u datasheet
standard microcircuit drawing size a 5962-95801 defense supply center columbus columbus, ohio 43216-5000 revision level b sheet 12 dscc form 2234 apr 97 4.4.4 group e inspection . group e inspection is required only for parts in tended to be marked as radiation hardness assured (see 3.5 herein). a. end-point electrical par ameters shall be as specified in table iia herein. b. for device classes q and v, the devices or test vehicl e shall be subjected to radiation hardness assured tests as specified in mil-prf-38535 for the rha level being tested. for device class m, the devices shall be subjected to radiation hardness assured tests as specified in mil- prf-38535, appendix a for the rha level being tested. all device classes must meet the postirradiation end-poi nt electrical parameter limits as defined in t able i at t a = +25 c 5 c, after exposure, to the subgroups specified in table iia herein. 4.4.4.1 total dose irradiation testing . total dose irradiation testing shall be performed in accordance with mil-std-883, method 1019, and as specified herein. 4.4.4.1.1 accelerated aging testing . accelerated aging testing shall be performed on all devices requiring a rha level greater than 5k rads (si). the post-anneal end-point electrical parameter limits shall be as specified in table i herein and s hall be the pre-irradiation end-point el ectrical parameter limits at 25 c 5 c. testing shall be performed at initial qualification and after any design or process changes which ma y affect the rha response of the device. 4.4.4.2 dose rate induced latchup testing . dose rate induced latchup testing shall be performed in accordance with test method 1020 of mil-std-883 and as specified herein (see 1.4 her ein). tests shall be performed on devices, sec, or approved test structures at technology qualification and after any design or process changes that may affect the rha capability of the process. 4.4.4.3 dose rate upset testing . dose rate upset testing shall be performed in accordance with test method 1021 of mil-std-883 and herein (see 1.4 herein). a. transient dose rate upset testing shall be performed at initial qualification and after any design or process changes which may affect the rha performance of the devices. test 10 devices with 0 defects unless otherwise specified. b. transient dose rate upset testing for class q and v devices shall be performed as specified by a trb approved radiation hardness assur ance plan and mil-prf-38535. table iii. irradiation test connections. 1 / open ground v cc = 5.0 v 0.5 v 2, 4, 6, 8, 10, 12 7 1, 3, 5, 9, 11, 13, 14 1 / each pin except v cc and gnd will have a resistor of 47 k ? 5% for irradiation testing. 4.4.4.4 single event phenomena (sep) . sep testing shall be required on class v dev ices (see 1.4 herein). sep testing shall be performed on a technology process on the standard evaluation ci rcuit (sec) or alternate sep test vehicle as approved by the qualifying activity at initial qualification and after any des ign or process changes which may affect the upset or latchup characteristics. the recommended test conditions for sep are as follows: a. the ion beam angle of incidence shall be between normal to the die surface and 60 to the normal, inclusive (i.e. 0 angle 60 ). no shadowing of the ion beam due to fixturing or package related effects is allowed. b. the fluence shall be 100 errors or 10 6 ions/cm 2 . c. the flux shall be between 10 2 and 10 5 ions/cm 2 /s. the cross-section shall be verified to be flux independent by measuring the cross-section at two flux rates that differ by at least an order of magnitude. d. the particle range shall be 20 microns in silicon. e. the test temperature shall be +25 c and the maximum rated operating temperature 10 c. .com .com .com .com 4 .com u datasheet
standard microcircuit drawing size a 5962-95801 defense supply center columbus columbus, ohio 43216-5000 revision level b sheet 13 dscc form 2234 apr 97 f. bias conditions shall be defined by the manufacturer for the latchup measurements. g. test four devices with zero failures. 4.5 methods of inspection . methods of inspection s hall be specified as follows: 4.5.1 voltage and current . unless otherwise specified, all voltages given ar e referenced to the microcircuit gnd terminal. currents given are conventional current and positiv e when flowing into the referenced terminal. 5. packaging 5.1 packaging requirements . the requirements for packaging shall be in accordance with mil-prf-38535 for device classes q and v or mil-prf-38535, appendix a for device class m. 6. notes 6.1 intended use . microcircuits conforming to this drawing are intended for use for gove rnment microcircuit applications (original equipment), design applic ations, and logistics purposes. 6.1.1 replaceability . microcircuits covered by this drawing will repl ace the same generic device covered by a contractor- prepared specification or drawing. 6.1.2 substitutability . device class q devices will replace device class m devices. 6.2 configuration control of smd's . all proposed changes to existing smd's will be coordinated with the users of record for the individual documents. this coordination will be accomplished using dd form 1692, engineering change proposal. 6.3 record of users . military and industrial users should inform de fense supply center columbus when a system application requires configuration control and which smd's are applic able to that system. dscc will maintain a record of users and this list will be used for coordination and distribution of changes to the drawings. users of drawings covering microelectronic devices (fsc 5962) shoul d contact dscc-va, telephone (614) 692-0544. 6.4 comments . comments on this drawing should be directed to dscc-va , columbus, ohio 43216-5000, or telephone (614) 692-0547. 6.5 abbreviations, symbols, and definitions . the abbreviations, symbols, and definitions used herein are defined in mil-prf-38535 and mil-hdbk-1331. 6.6 sources of supply . 6.6.1 sources of supply for device classes q and v . sources of supply for device classes q and v are listed in qml-38535. the vendors listed in qml-38535 have submitted a certificate of compliance (see 3.6 herein) to dscc-va and have agreed to this drawing. 6.6.2 approved sources of supply for device class m . approved sources of supply for cl ass m are listed in mil-hdbk-103. the vendors listed in mil-hdbk-103 have agreed to this drawi ng and a certificate of compliance (see 3.6 herein) has been submitted to and accepted by dscc-va. 6.7 additional information . when applicable, a copy of the following additional data shall be maintained and available from the device manufacturer: a. rha upset levels. b. test conditions (sep). c. number of upsets (sep). d. number of transients (sep). e. occurrence of latchup (sep). .com .com .com .com 4 .com u datasheet
standard microcircuit drawing size a 5962-95801 defense supply center columbus columbus, ohio 43216-5000 revision level b sheet 14 dscc form 2234 apr 97 appendix a appendix a forms a part of smd 5962-95801 a.1 scope a.1.1 scope . this appendix establishes minimum requirements for microcircuit die to be supplied under the qualified manufacturers list (qml) program. qml microcircuit die meeting the requirem ents of mil-prf-38535 and the manufacturers approved qm plan for use in monolithic microc ircuits, multichip modules (mcms), hybrid s, electronic modules, or devices using chip and wire designs in accordance with mil-prf-38534 are spec ified, herein. two product a ssurance classes consisting of military high reliability (device class q) and space application (dev ice class v) are reflected in the part or identification n umber (pin). when available, a choice of radiation hardi ness assurance (rha) levels are reflected in the pin. a.1.2 pin . the pin shall be as shown in the following example: 5962 r 95801 01 v 9 a federal rha device device die die stock class designator type class code details designator (see a.1.2.1) (see a.1.2.2) designator (see a.1.2.4) (see a.1.2.3) drawing number a.1.2.1 rha designator . device classes q and v rha identified die s hall meet the mil-prf-38535 specified rha levels. a dash (-) indicates a non-rha die. a.1.2.2 device type(s) . the device type(s) shall identify the circuit function as follows: device type generic number circuit function 01 hcs05 radiation hardened, sos, high speed cmos, hex inverter with open drain a.1.2.3 device class designator . device class device requirements documentation q or v certification and qualification to the die requirements of mil-prf-38535. .com .com .com .com 4 .com u datasheet
standard microcircuit drawing size a 5962-95801 defense supply center columbus columbus, ohio 43216-5000 revision level b sheet 15 dscc form 2234 apr 97 appendix a appendix a forms a part of smd 5962-95801 a.1.2.4 die details . the die details designation shall be a unique lette r which designates the die?s physical dimensions, bonding pad location(s) and related electrical function(s), interface materials, and other assembly related information, for ea ch product and variant supplied to this appendix. a.1.2.4.1 die physical dimensions . die type figure number 01 a-1 a.1.2.4.2 die bonding pad locations and electrical functions . die type figure number 01 a-1 a.1.2.4.3 interface materials . die type figure number 01 a-1 a.1.2.4.4 assembly related information . die type figure number 01 a-1 a.1.3 absolute maximum ratings . see paragraph 1.3 for details. a.1.4 recommended operating conditions . see paragraph 1.4 for details. a.2 applicable documents a.2.1 government specificat ions, standards, bulletin, and handbooks . unless otherwise specified, the following specifications, standard, and handbook of the iss ue listed in that issue of the department of defense index of specifications and standards specified in the solicitation, form a part of this drawing to the extent specified herein. specification department of defense mil-prf-38535 - integrated circuits, manufac turing, general specification for. standard department of defense mil-std-883 - test method standard microcircuits. handbook department of defense mil-hdbk-103 - list of standard microcircuit drawings. (copies of the specification, standard, and handbook required by manufacturers in connection with specific acquisition functions should be obtained from the c ontracting activity or as direct ed by the contracting activity). .com .com .com .com 4 .com u datasheet
standard microcircuit drawing size a 5962-95801 defense supply center columbus columbus, ohio 43216-5000 revision level b sheet 16 dscc form 2234 apr 97 appendix a appendix a forms a part of smd 5962-95801 a.2.2 order of precedence . in the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing shall take precedence. a.3 requirements a.3.1 item requirements . the individual item requirements for device classes q and v shall be in accordance with mil-prf-38535 and as specified herein or as modified in the device manufacturer?s quality management (qm) plan. the modification in the qm plan shall not affect the form, fit or function as described herein. a.3.2 design, construction and physical dimensions . the design, construction and phy sical dimensions shall be as specified in mil-prf-38535 and the manufacturer?s qm plan, for device classes q and v and herein. a.3.2.1 die physical dimensions . the die physical dimensions shall be as specified in a.1.2.4.1 and on figure a-1. a.3.2.2 die bonding pad locations and electrical functions . the die bonding pad locations and electrical functions shall be as specified in a.1.2.4.2 and on figure a-1. a.3.2.3 interface materials . the interface materials for the die shall be as specified in a.1.2.4.3 and on figure a-1. a.3.2.4 assembly related information . the assembly related information shall be as specified in a.1.2.4.4 and on figure a-1. a.3.2.5 truth table . the truth table shall be as defined in paragraph 3.2.3 herein. a.3.2.6 radiation exposure circuit . the radiation exposure circuit sha ll be as defined in paragraph 3.2.6 herein. a.3.3 electrical performanc e characteristics and post-i rradiation parameter limits . unless otherwise specified herein, the electrical performance characteristics and pos t-irradiation parameter limit s are as specified in table i of the body of this document. a.3.4 electrical test requirements . the wafer probe test requirements shall include functional and parametric testing sufficient to make the packaged die capable of meeting the electrical performance requirements in table i. a.3.5 marking . as a minimum, each unique lot of die, loaded in single or multiple stack of carriers, for shipment to a customer, shall be identified with the wafer lot number, the ce rtification mark, the manufactu rer?s identification and the pin listed in a.1.2 herein. the certification mark s hall be a ?qm? or ?q? as required by mil-prf-38535. a.3.6 certification of compliance . for device classes q and v, a certificat e of compliance shall be required from a qml-38535 listed manufacturer in order to suppl y to the requirements of this drawing (see a.6.4 herein). the certificate of compliance submitted to dscc-va prior to listing as an approved source of supply for this appendix shall affirm that the manufacturer?s product meets, for device classes q and v, t he requirements of mil-prf-38535 and the requirements herein. a.3.7 certificate of conformance . a certificate of conformance as requi red for device classes q and v in mil-prf-38535 shall be provided with each lot of microc ircuit die delivered to this drawing. .com .com .com .com 4 .com u datasheet
standard microcircuit drawing size a 5962-95801 defense supply center columbus columbus, ohio 43216-5000 revision level b sheet 17 dscc form 2234 apr 97 appendix a appendix a forms a part of smd 5962-95801 a.4 quality assurance provisions a.4.1 sampling and inspection . for device classes q and v, die sampling and inspection procedures shall be in accordance with mil-prf-38535 or as modified in the dev ice manufacturer?s quality management (qm) plan. the modifications in the qm plan shall not affect the form, fit, or function as described herein. a.4.2 screening . for device classes q and v, screening shall be in accordance with mil-prf-38535, and as defined in the manufacturer?s qm plan. as a mi nimum, it shall consist of: a) wafer lot acceptance for class v product using the criteria defined in mil-std-883, test method 5007. b) 100% wafer probe (see paragraph a.3.4 herein). c) 100% internal visual inspection to the applicable cla ss q or v criteria defined in mil-std-883, test method 2010 or the alternate procedures allow ed in mil-std-883, test method 5004. a.4.3 conformance inspection . a.4.3.1 group e inspection . group e inspection is required only for parts intended to be identified as radiation assured (see a.3.5 herein). rha levels for device classes q and v shall be as specified in mil-prf-38535. end point electrical testin g of packaged die shall be as specified in table iia herein. group e tests and conditions are as specified in paragraph 4.4.4 herein. a.5 die carrier a.5.1 die carrier requirements . the requirements for the die carrier shall be accordance with the manufacturer?s qm plan or as specified in the purchase order by the acquiring activity. the die carrier shall provide adequate physical, mechanical a nd electrostatic protection. a.6 notes a.6.1 intended use . microcircuit die conforming to th is drawing are intended for use in micr ocircuits built in accordance with mil-prf-38535 or mil-prf-38534 for government microcircuit applications (origi nal equipment), design applications and logistics purposes. a.6.2 comments . comments on this appendix should be directed to dscc-va, columbus, ohio, 43216-5000 or telephone (614) 692-0547. a.6.3 abbreviations, symbols and definitions . the abbreviations, symbols, and definitions used herein are defined with mil-prf-38535 and mil-std-1331. a.6.4 sources of supply for device classes q and v . sources of supply for device classes q and v are listed in qml-38535. the vendors listed within qml-38535 have submitted a certificate of compliance (see a.3.6 herein) to dscc-va and have agreed to this drawing. .com .com .com .com 4 .com u datasheet
standard microcircuit drawing size a 5962-95801 defense supply center columbus columbus, ohio 43216-5000 revision level b sheet 18 dscc form 2234 apr 97 appendix a appendix a forms a part of smd 5962-95801 o die physical dimensions . die size: 2200 x 2240 microns. die thickness: 21 2 mils. o die bonding pad locations and electrical functions . the following metallization diagram supplies the locations and electrical functions of the bonding pads. the internal metallization layout and alphanumeric information contained within this diagram may or may not represent the actual circuit defined by this smd. note: pad numbers reflect terminal numbers when placed in case outlines c, x (see figure 1). figure a-1 .com .com .com .com 4 .com u datasheet
standard microcircuit drawing size a 5962-95801 defense supply center columbus columbus, ohio 43216-5000 revision level b sheet 19 dscc form 2234 apr 97 appendix a appendix a forms a part of smd 5962-95801 o interface materials . top metallization: sial 11.0 k? 1.0 k? backside metallization: none glassivation type: sio 2 thickness: 13.0 k? 2.6 k? substrate: silicon on sapphire (sos) o assembly related information . substrate potential: insulator special assembly instructions: bond pad #14 (v cc ) first figure a-1 ? continued. .com .com .com .com 4 .com u datasheet
standard microcircuit drawing bulletin date: 04-05-07 approved sources of supply for smd 5962-95801 are listed below for immediate acquisition information only and shall be added to mil-hdbk-103 and qml-38535 during the next revision. mil-hdbk-103 and qml-38535 will be revised to include the addition or deletion of sources. the vendors listed below have agreed to this drawing and a certificate of compliance has been submitted to and accept ed by dscc-va. this bulletin is superseded by the next dated revision of mil-hdbk-103 and qml-38535. standard microcircuit drawing pin 1 / vendor cage number vendor similar pin 2 / 5962r9580101vcc 3 / hcs05dmsr 5962R9580101VXC 34371 hcs05kmsr 5962r9580101v9a 3 / hcs05hmsr 1 / the lead finish shown for each pin representing a hermetic package is the most readily available from the manufacturer listed for that part. if the desired lead finish is not listed, contact the vendor to determine its availability. 2 / caution . do not use this number for item acquisition. items acquired to this number may not satisfy the performance requirements of this drawing. 3 / no longer available from an approved source of supply. vendor cage vendor name number and address 34371 intersil corporation 2401 palm bay blvd. p.o. box 883 melbourne, fl 32902-0883 the information contained herein is disseminated for convenience only and the government assumes no liability whatsoever for any inaccuracies in the information bulletin. .com .com .com 4 .com u datasheet

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